The valence zone structure in PbSb2Te4 and anisotropy of hole relaxation time


  • Сергей Александрович Немов Санкт-Петербургский политехнический университет Петра Великого
  • Валентина Андреева Санкт-Петербургский политехнический университет Петра Великого
  • Виталий Волхин Санкт-Петербургский государственный электротехнический университет «ЛЭТИ» им. В. И. Ульянова
  • Виктория Юрьевна Проклова Забайкальский государственный университет
  • Юрий Улашкевич Физико-технический институт имени А. Ф. Иоффе РАН


Ключевые слова:

crystal PbSb2Te4, semiconductor, transport properties, temperature, band structure, Fermi surface, IR-reflection, X-ray investigations


The article analyses the existing set of data on the temperature dependences of the main kinetic coefficients and the IR-reflection spectra R(ν) of the PbSb2Te4 crystals. The form of the Fermi surface is discussed. The anisotropy of holes’ effective mass and relaxation time is estimated. The complex structure of the valence zone is confirmed, the values of these parameters are refined.

Complex X-ray studies of the structure and composition of PbSb2Te4 samples gave the possibilities to clarify the real crystal structure and explain the number of features in the IR-reflection spectra.

Библиографические ссылки

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Physics of Semiconductors