The valence zone structure in PbSb2Te4 and anisotropy of hole relaxation time

Авторы

  • Сергей Александрович Немов Санкт-Петербургский политехнический университет Петра Великого https://orcid.org/0000-0001-7673-6899
  • Валентина Андреева Санкт-Петербургский политехнический университет Петра Великого https://orcid.org/0000-0001-6085-4153
  • Виталий Волхин Санкт-Петербургский государственный электротехнический университет «ЛЭТИ» им. В. И. Ульянова
  • Виктория Юрьевна Проклова Забайкальский государственный университет
  • Юрий Улашкевич Физико-технический институт имени А. Ф. Иоффе РАН

DOI:

https://doi.org/10.33910/2687-153X-2021-2-4-165-171

Ключевые слова:

crystal PbSb2Te4, semiconductor, transport properties, temperature, band structure, Fermi surface, IR-reflection, X-ray investigations

Аннотация

The article analyses the existing set of data on the temperature dependences of the main kinetic coefficients and the IR-reflection spectra R(ν) of the PbSb2Te4 crystals. The form of the Fermi surface is discussed. The anisotropy of holes’ effective mass and relaxation time is estimated. The complex structure of the valence zone is confirmed, the values of these parameters are refined.

Complex X-ray studies of the structure and composition of PbSb2Te4 samples gave the possibilities to clarify the real crystal structure and explain the number of features in the IR-reflection spectra.

Библиографические ссылки

Goltsman, B. M., Kudinov, V. A., Smirnov, I. A. (1972) Poluprovodnikovye termoelektricheskie materialy na osnove Bi2Te3 [Semiconductor thermoelectric materials based on Bi2Te3]. Moscow: Nauka Publ., 320 p. (In Russian)

Nemov, S. A., Blagikh, N. M., Dzhafarov, M. B. (2014) Effect of interband scattering on transport phenomena in p-PbSb2Te4. Semiconductors, 48 (8), 999−1005. https://doi.org/10.1134/S1063782614080193 (In English)

Nemov, S. A., Blagikh, N. M., Shelimova, L. E. (2013) Features of the energy spectrum and hole-scattering mechanisms in PbSb2Te4. Semiconductors, 47 (1), 16−21. https://doi.org/10.1134/S106378261301017X (In English)

Nemov, S. A., Ulashkevich, Yu. V., Pogumirsky, M. V., Stepanova, O. S. (2020) Reflection from the Side Face of a PbSb2Te4 Crystal. Semiconductors, 54 (3), 282−284. https://doi.org/10.1134/S1063782620030161 (In English)

Nemov, S. A., Ulashkevich, Yu. V., Povolotskii, A. V., Khlamov, I. I. (2016) Reflectance of a PbSb2Te4 crystal in a wide spectral range. Semiconductors, 50 (10), 1322−1326. https://doi.org/10.1134/S1063782616100183 (In English)

Shelimova, L. E., Karpinskii, O. G., Svechnikova, T. E. et al. (2004) Synthesis and structure of layered compounds in the PbTe−Bi2Te3 and PbTe−Sb2Te3 systems. Inorganic Materials, 40 (12), 1264−1270. https://doi.org/10.1007/s10789-005-0007-2 (In English)

Shelimova, L. E., Svechnikova, T. E., Konstantinov, P. P. et al. (2007) Anisotropic thermoelectric properties of the layered compounds PbSb2Te4 and PbBi4Te7. Inorganic Materials, 43 (2), 125−131. https://doi.org/10.1134/S0020168507020057 (In English)

Zhitinskaya, M. K., Nemov, S. A., Shelimova, L. E. et al. (2008) Thermopower anisotropy in the layered compound PbSb2Te4. Physics of the Solid State, 50 (1), 6−8. https://doi.org/10.1134/S1063783408010022 (In English)

Опубликован

2021-12-30

Выпуск

Раздел

Physics of Semiconductors