Investigation of the properties of zinc oxide based heterostructures

Авторы

  • Андрей Семенов Рязанский государственный радиотехнический университет им. В. Ф. Уткина https://orcid.org/0000-0003-2780-5661
  • Татьяна Холомина Рязанский государственный радиотехнический университет им. В. Ф. Уткина https://orcid.org/0000-0003-3902-618X
  • Владимир Георгиевич Литвинов Рязанский государственный радиотехнический университет им. В. Ф. Уткина https://orcid.org/0000-0001-6122-8525
  • Александр Валерьевич Ермачихин Рязанский государственный радиотехнический университет им. В. Ф. Уткина https://orcid.org/0000-0002-3808-9691

DOI:

https://doi.org/10.33910/2687-153X-2021-2-4-172-179

Ключевые слова:

surface states, heterostructures, ZnO, C-V-characteristics, I-V-characteristics

Аннотация

The paper presents the results of an experimental study of the electric properties of ZnO-based polycrystalline heterosructures. C-V-characteristics of In/ZnO/n-Si/Al and Au/ZnO/n-Si/Al heterostructures were modeled. Influence of upper contacts material and annealing technology on structure characteristics was investigated. Surface states influence according to applied theoretical model was analyzed. Empirical dependence of the surface potential in silicon on the voltage applied on the structure was derived.

Библиографические ссылки

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Опубликован

2021-12-30

Выпуск

Раздел

Physics of Semiconductors