Кристалл As4Se4 в сравнении с молекулой As4Se4: исследование геометрии и электронной структуры с помощью плосковолнового метода DFT

Авторы

  • Антон Андреевич Гавриков Российский государственный педагогический университет им. А. И. Герцена https://orcid.org/0000-0001-6121-2013
  • Владимир Георгиевич Кузнецов Физико-технический институт имени А. Ф. Иоффе РАН https://orcid.org/0000-0003-1996-0055
  • Владимир Андреевич Трепаков Физико-технический институт им. А. Ф. Иоффе

DOI:

https://doi.org/10.33910/2687-153X-2024-5-2-91-103

Ключевые слова:

халькогениды, геометрическая и электронная структура, химическая связь, As4Se4, молекула, молекулярный кристалл, метод функционала плотности

Аннотация

Молекулярные кристаллы халькогенидов обнаруживают широкий спектр изменений химических и физических свойств под действием света с энергией, превышающей ширину запрещенной зоны. Большинство этих свойств определяются электронной структурой. Однако по электронной структуре As4Se4 имеется лишь несколько теоретических статей по молекуле и всего только две — по кристаллу As4Se4. В настоящей работе впервые были сопоставлены геометрическая и электронная структура кристалла As4Se4 и молекулы As4Se4, рассчитанные в рамках периодической модели методом DFT в одних и тех же приближениях. При этом были рассчитаны равновесные длины связей и валентные углы вместе с разностными электронными плотностями, зарядами Малликена, Лёвдина и Бадера, а также Малликеновскими заселенностями перекрывания, и проведён сравнительный анализ характера химической связи в кристалле As4Se4 и молекуле As4Se4. Выполненные DFT расчеты зонной структуры показали, что кристалл As4Se4 является непрямозонным полупроводником.

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Опубликован

2024-06-24

Выпуск

Раздел

Physics of Semiconductors