Nernst mobility of holes in Bi2Te3

Authors

  • Sergey A. Nemov Peter the Great Saint Petersburg Polytechnic University https://orcid.org/0000-0001-7673-6899
  • Grigorij V. Demyanov Peter the Great Saint Petersburg Polytechnic University
  • Alexey V. Povolotskiy Saint Petersburg State University

DOI:

https://doi.org/10.33910/2687-153X-2022-3-3-144-148

Keywords:

Bismuth telluride, hole conductivity, temperature dependence, specific electrical conductivity, thermopower coefficient, Hall coefficient, Nernst-Ettingshausen coefficient, hole scattering mechanism, Nernst mobility, acoustic phonons

Abstract

This paper presents the results of a study of the electrical conductivity coefficient, the Hall coefficient, the Seebeck coefficient, the transverse Nernst-Ettingshausen coefficient and their anisotropy in a Bi2Te3 single crystal with a hole concentration p =1 × 1019 cm–3 at temperatures 77–350 К. It is established that hole scattering occurs mainly on long-wave acoustic phonons. Despite the fact thatthe chemical potential level is located near the top of the additional extreme of the valence band, no interband scattering was detected. The complex structure of the valence band is confirmed.

References

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Published

30.09.2022

Issue

Vol. 3 No. 3 (2022)

Section

Physics of Semiconductors

License

Copyright (c) 2022 Sergey A. Nemov, Grigorij V. Demyanov, Alexey V. Povolotskiy

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