Effect of a transverse electric field on the resistance of thin films of the Bi1 – xSbx (x = 0–0.12) system on mica
DOI:
https://doi.org/10.33910/2687-153X-2023-4-2-75-80Keywords:
bismuth, bismuth-antimony, thin films, electric field effect, mica substrateAbstract
The paper is devoted to the study of transverse electric field effect on transport properties of charge carriers in bismuth and bismuth-antimony thin films. Experimental results reveal the existence of electric field effect in thin films of composition up to 12 at.% Sb. The dependencies of resistance on magnitude of electric field are obtained in a wide range of film thicknesses. A qualitative interpretation of the observed effect is given based on the analysis of the mobility of electrons and holes in films depending on the sign of the electric field and the film thickness.
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Copyright (c) 2023 Vladimir M. Grabov, Vladimir A. Komarov, Stepan V. Pozdnyakov, Vasilisa A. Gerega, Anton V. Suslov
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