Electric transport in thin modified films of selenide and sulfide of arsenic
DOI:
https://doi.org/10.33910/2687-153X-2023-4-2-68-74Keywords:
modification, conductivity, activation energy, chalcogenide glassy semiconductor, single pair of electronsAbstract
In the studied ChGS the effect of modification influence on the nature of the temperature dependence of conductivity was found. The value of the latter increases with a decrease in the band gap and, accordingly, with an increase of the activation energy. This energy correlates with the change in the height of the potential barrier at the contact between the metal and the chalcogenide glassy semiconductor for different compositions of As2Se3 and As2S3 materials. The significant role of a single pair of electrons belonging to the atoms of the modifying impurity is noted. The pair of electrons is responsible for the realization of disordered and defective structure and for the formation of the energy system of local states that affect the process of charge carrier transfer.
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