Admittance of AgI films in the temperature range of the semiconductor-superionic phase transition

Authors

DOI:

https://doi.org/10.33910/2687-153X-2023-4-3-131-138

Keywords:

impedance, admittance, dielectric measurements, AgI, phase transition, superionic

Abstract

In the temperature range (80–250) °С, the frequency dependence of the admittance of thin (90 nm) AgI films with a semiconductor-superionic phase transition has been studied. The applicability of the Debye theory for modeling the physical mechanism of the dielectric response of a material to the action of an alternating electric field is shown. It has been found that the reported experimental technique makes it possible to separately determine the parameters of the electronic and ionic components of the electrical conductivity of a superionic.

References

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Published

07.09.2023

Issue

Section

Physics of Semiconductors