The behavior of the optical characteristics of modified arsenic triselenide films
DOI:
https://doi.org/10.33910/2687-153X-2024-5-1-39-43Keywords:
chalcogenide glasses, modifying impurity, absorption coefficient, Urbach energy, band gapAbstract
The influence of the level of modifier content on the behavior of the optical characteristics of thermally deposited films of arsenic triselenide chalcogenide glasses is investigated. A parallel shift of the absorption edge towards short wavelengths and a decrease in the slope of the exponential “tail” are observed. The increase in the slope of the Urbach energy dependence with an increasing modification level can be explained both by an increase in the concentration of metal-metal bonds, due to a deviation from stoichiometry, and by a transition through the value of the coordination number corresponding to the point of the topological phase transition. A simultaneous decrease in the band gap apparently indicates an increase in the defectiveness of the structure. In addition, it may indicate the presence of a higher concentration of trap states near the Fermi level, leading to a corresponding smearing in the “tails” of conductivity in chalcogenide glassy semiconductors (CGS).
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