Fluorescence of Pb1−хCdхSe nanocrystal films

Authors

DOI:

https://doi.org/10.33910/2687-153X-2020-1-2-70-73

Keywords:

fluorescence, nanocrystalline films, semiconductor compounds, solid solutions, quantum dots, surface morphology, luminescence spectrum, band gap

Abstract

The interest in lead chalcogenide structures is driven by the possibilities of using nanocrystal lead selenide films, for example Pb1−хCdхSe, as fast and compact sources of infrared range with low energy consumption. Besides, PbSe films oxidised in the atmosphere of oxygen can serve as optical light receivers
of infrared range in gas sensors.

References

Bestaev, M. V., Makhin, A. V., Moshnikov, V. A., Tomaev, V. V. (2000) Sposob prigotovleniya shikhty dlya polucheniya tverdykh rastvorov hal’kogenidov svintsa i olova parofaznymi metodami [Process of preparation of charge to produce solid solutions of chalcogenides of lead and tin by para-phase methods]. Patent RU2155830. Register date 10.09.2000. Granted by Rospatent. (In Russian)

Gamarts, A. E., Moshnikov, V. A., Chesnokova, D. B. (2006) Photoluminescence in the Pb1−xCdxSe polycrystalline layers activated in the presence of iodine vapor. Semiconductors, 40 (6), 662–664. DOI: 10.1134/S1063782606060091 (In English)

Henry, Ch. H. (1993) The origin of quantum wells and the quantum well laser. In: Zory, P. S. Jr. (ed.). Quantum well lasers. Boston: Academic Press, pp. 1–16. (In English)

Nepomnjashchij, S. V., Pogodina, S. B., Shelekhin, Ju. L., Maksjutenko, M. A. (2003) Infrakrasnyj poluprovodnikovyj izluchatel’ [Semiconductor infrared radiator]. Patent RU2208268. Register date 10.07.2003. Granted by Rospatent. (In Russian)

Nepomnyaschij, S. V., Pashkevich, A. V., Shelekhin, Yu. A., Dijkov, L. K. (1984) Fotoluminestsentsia polikristallicheskikh plenok Pb1−xCdxSe [Photoluminescence of polycrystalline films Pb1−xCdxSe)]. Fizika i tekhnika poluprovodnikov— Semiconductors or Physics of the Solid State, 18 (12), 2233–2235. (In Russian).

Tomaev, V. V. (2009) Ferroelectric phase transition in the PbSe + PbSeO3 composite. Glass Physics and Chemistry, 35 (6), 660–667. DOI: 10.1134/S1087659609060169 (In English)

Yunovich, À. E., Averyushkin, A. S., Drozd, I. A., Ogneva, V. G. (1979) Zavisimost’ vynuzhdennogo izlucheniya tonkikh plenok PbS1−xSex ot temperatury v intervale 50–300 K [Dependence of the induced radiation of thin films PbS1-xSex on temperature in the range of temperatures 50–300 K]. Fizika i tekhnika poluprovodnikov— Semiconductor Physics and Technology, 13 (9), 1694–1700. (In Russian)

Cover of the journal "Physics of Complex Systems" (vol. 1, no. 2)

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Published

19.06.2020

Issue

Vol. 1 No. 2 (2020)

Section

Condensed Matter Physics

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Copyright (c) 2020 Vladimir A. Polischuk, Vladimir V. Tomaev, Aleksandra Yu. Sergienko

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