Dielectric properties of thin-film metal/dielectric nanocomposites based on zirconium nitrides
DOI:
https://doi.org/10.33910/2687-153X-2024-5-4-177-186Keywords:
heterogeneous materials, dielectric spectroscopy, dielectric relaxation, zirconium oxynitrides, thin filmsAbstract
Zirconium oxynitride films were synthesized by sputtering zirconium nitride with subsequent atmospheric annealing to oxynitride. The resulting films were studied by dielectric spectroscopy. It was shown that the annealing temperature affects the dielectric properties of the film. Atmospheric annealing leads to dispersion of the permittivity and relaxation processes. The nonlinear nature of the temperature dependence of the relaxation time and the difference in the relaxation times are manifestations of the heterogeneous structure of the films and the size effect of the metal/dielectric structure.
References
Carvalho, P., Chappe, J. M., Cunha, L. et al. (2008) Influence of the chemical and electronic structure on the electrical behavior of zirconium oxynitride films. Journal of Applied Physics, 103 (10), article 104907. https://doi.org/10.1063/1.2927494 (In English)
Cole, K. S., Cole, R. H. (1941) Dispersion and absorption in dielectrics I. Alternating current characteristics. The Journal of Chemical Physics, 9 (4), 341–351. https://doi.org/10.1063/1.1750906 (In English)
Courts, S. S., Swinehart, P. R. (2003) Review of CernoxTM (zirconium oxy-nitride) thin-film resistance temperature sensors. AIP Conference Proceedings, 684 (1), 393–398. https://doi.org/10.1063/1.1627157 (In English)
Da Silva-Oliveira, C. I., Martinez-Martinez, D., Apreutesei, M. et al. (2018) Thermal stability of Zr-O-N(:Ti) thin films prepared by magnetron sputtering. Vacuum, 151, 148–155. https://doi.org/10.1016/j.vacuum.2018.02.002 (In English)
Khan, I. A., Kashif, M., Farid, A. et al. (2017) Effect of annealing temperature on the structural, morphological, and mechanical properties of polycrystalline zirconium oxynitride composite films deposited by plasma focus device. Japanese Journal of Applied Physics, 56 (12), article 125501. https://doi.org/10.7567/JJAP.56.125501 (In English)
Mohamed, S. H., Hadia, N. M. A., Ali, H. M. (2015) Effect of annealing on properties of decorative zirconium oxynitride thin films. European Physical Journal Applied Physics, 69 (3), article 30301. https://doi.org/10.1051/epjap/2015140475 (In English)
Streibel, V., Schonecker, J. L., Wagner, L. I. et al. (2024) Zirconium oxynitride thin films for photoelectrochemical water splitting. ACS Applied Energy Materials, 7 (9), 4004–4015. https://doi.org/10.1021/acsaem.4c00303 (In English)
You, M., Li, Y., Zhang, H. et al. (2022) The mechanism of phase transition induced by oxygen doping in zirconium nitride thin films. Journal of Materials Science, 57 (4), 18456–18467. https://doi.org/10.1007/s10853-022-07182-z (In English)
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Copyright (c) 2024 Artur A. Galiullin, Ivan V. Lunev, Amir I. Gumarov, Igor V. Yanilkin
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