Thermal and laser crystallization of InSe thin films formed by vacuum thermal evaporation
DOI:
https://doi.org/10.33910/2687-153X-2025-6-2-93-103Keywords:
chalcogenide materials, binary compounds, InSe, optical properties, structural properties, laser crystallizationAbstract
Binary chalcogenides have found a wide range of applications due to the possibility of fast and reversible phase transitions, tunable band gap, and high charge carrier mobility. This paper presents the results of thermal and laser crystallization of InSe thin films deposited by vacuum thermal evaporation of synthesized material and covered with a protective SiO2 layer. The amorphous state of as-deposited InSe thin films was confirmed by Raman spectroscopy. Thermal and laser crystallization processes were studied using electrical resistivity measurements and optical microscopy respectively. The temperature and laser power ranges required for the crystallization of the InSe thin film were determined. The Raman spectroscopy showed that the degree of crystallinity of modified regions of InSe thin films can be tuned by varying the power of laser irradiation.
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Copyright (c) 2025 Mariya E. Fedyanina, Victoria B. Pestova, Dmitry V. Pepelyaev, Yana S. Lebedeva, Alexey V. Babich, Mikhail P. Smayev, Alexey V. Romashkin, Sergey I. Nesterov, Sergey A. Kozyukhin
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