Composition, structure and properties of PbSb2Te4 crystals grown by the Chokhralsky method
DOI:
https://doi.org/10.33910/2687-153X-2025-6-3-144-149Keywords:
semiconductor, PbSb2Te4, thermoelectricity, topology insulator, tetradymites, doping, kinetic coefficients, nanocomposites, X-Ray diffraction analysis, temperature dependences of the Hall coefficient, valence band structureAbstract
This paper presents the results of X-ray diffraction and electrophysical studies of PbSb2Te4
crystals grown by the Chokhralsky method. The phase composition and crystal structure of ingots,
including those doped with a donor admixture of copper, are discussed from the qualitative and quantitative
perspectives. The samples are a periodic structure. They are multiphase, with PbSb2Te4 and Sb2Te3
as dominant phases. The presence of intrinsic electrically active point defects causes a high concentration
of holes p ≈ 3.2 × 1020 cm-3. The temperature dependences of the kinetic coefficients indicate a complex
structure of the valence band. Impurity atoms occupy vacancies in the metal sublattice during alloying
and form chemical compounds with Sb and Te atoms.
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Copyright (c) 2025 Sergei A. Nemov, Valentina D. Andreeva, Aleksei Yu. Aliabev
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