Features of copper doping of PbSb2Te4 crystals

Authors

  • Sergei A. Nemov St. Petersburg State Electrotechnical University ‘LETI’ named after V. I. Ulyanov (Lenin) https://orcid.org/0000-0001-7673-6899
  • Alexey V. Povolotskiy Saint Petersburg State University
  • Valentina D. Andreeva Peter the Great St. Petersburg State Polytechnical University
  • Aleksei J. Aliabev St. Petersburg State Electrotechnical University ‘LETI’ named after V. I. Ulyanov (Lenin)

DOI:

https://doi.org/10.33910/2687-153X-2026-7-1-31-35

Keywords:

semiconductors, PbSb2Te4, thermoelectricity, Czochralski method, carrier concentration, doping mechanism, Bramfitt heterogeneous nucleation model, X-ray diffraction analysis, Raman spectra, septuple layers

Abstract

This paper presents the results of X-ray diffraction and Raman spectroscopy studies of Cu-doped PbSb2Te4 crystals grown by the Czochralski method. Electrophysical properties such as carrier concentration and thermoelectric Q factor ZT are discussed. A rationale is provided for introducing a donor impurity to optimize the properties of crystals as a potential thermoelectric material, and doping features are observed. The Bramfitt heterogeneous nucleation model is applied to calculate disregistry between the parameters of the crystal lattices of the phases occurring in crystals during the growth process. Possible copper-rich phases are predicted. The presence of chemically bound copper atoms forming new phases and their predominant location in the van der Waals gap between the septuple and quintuple layers is confirmed experimentally.

References

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Published

30.03.2026

Issue

Vol. 7 No. 1 (2026)

Section

Physics of Semiconductors

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Copyright (c) 2026 Sergei A. Nemov, Alexey V. Povolotskiy, Valentina D. Andreeva, Aleksei J. Aliabev

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