Electronic exchange between centres of iron in the vitreous arsenic selenide

Authors

  • Kudrat U. Bobokhuzhaev Tashkent Regional Сhirchik State Pedagogical Institute
  • Alla V. Marchenko Herzen State Pedagogical University of Russia https://orcid.org/0000-0002-9292-2541
  • Pavel P. Seregin Herzen State Pedagogical University of Russia

DOI:

https://doi.org/10.33910/2687-153X-2020-1-2-61-69

Keywords:

dopant iron atoms, chalcogenide glass, electron exchange, Mössbauer spectroscopy

Abstract

Iron atoms in vitreous arsenic selenide films form single electron donor centres, while the Fermi level shifts from the middle of the band gap to the bottom of the conduction band with an increase in the iron concentration due to the filling of single electron states of the acceptor type located below the Fermi level. The Mössbauer spectroscopy method was used to study the electronic exchange between ionised and neutral centres of iron in the glassy selenide of arsenic.

References

Bobokhuzhaev, K. U., Rabchanova, T. Yu., Seregin, P. P., Shaldenkova, A. V. (2015) Elektricheskaya aktivnost’ primesnykh atomov zheleza v stekloobraznykh selenidakh mysh’yaka [Electrical activity of iron impurity atoms in vitreous arsenic selenide]. Izvestiya Rossijskogo gosudarstvennogo pedagogicheskogo universiteta im. A. I. Gertsena — Izvestia: Herzen University Journal of Humanities & Sciences, 176, 61–71. (In Russian)

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Marchenko, A. V., Rabchanova, T. Yu., Seregin, P. P. et al. (2016) Origin of the electrical activity of iron atoms in vitreous arsenic selenide. Glass Physics and Chemistry, 42, 246–250. DOI: 10.1134/S1087659616030081 (In English)

Marchenko, A. V., Terukov, E. I., Egorova, A. Yu. et al. (2017) Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide. Semiconductors, 51, 449–453. DOI: 10.1134/S1063782617040133 (In English)

Marchenko, A., Nasredinov, F., Seregin, P. (2018) Dynamics of the two-electron processes in impurity semiconductors. Mössbauer spectroscopy of impurity centers of tin and germanium in crystalline and glassy chalcogenide semiconductors. Beau Bassin: LAP Lambert Academic Publishing, 390 p. (In English)

Turaev, E. Yu., Seregin, P. P., Nasredinov, F. S. (1990) Tin and iron impurity atom states in modified As2Se3 films. Physica Status Solidi (B), 161 (1), 287–292. DOI: 10.1002/pssb.2221610128 (In English)

Published

2020-06-19

Issue

Section

Condensed Matter Physics